铁电Hafnia和陡峭开关相变FET中的接近工程可调相变
Proximity Engineered Tunable Phase Transitions in Ferroelectric Hafnia and Steep Switching Phase Change FETs.
摘要(中文译文)
铁电氧化铪已成为先进电子学中的一种变革性材料，其具备互补金属氧化物半导体（CMOS）兼容性、稳健的铁电性以及可扩展性，适用于存储器和铁电场效应晶体管（FEFETs）等应用。我们在溶液法加工的镧掺杂氧化铪（LHO，厚度40 nm）中展示了无唤醒、稳健的铁电性。通过利用底电极TiO(N)（一种Mott绝缘体）中的金属-绝缘体转变（MIT），我们借助铁电氧化铪层中的邻近效应，实现了由去极化场控制的可逆极性-非极性相变。我们进一步表明，用不同厚度的AlO覆盖铁电层可使底电极发生轻微氧化，从而在140至260 K之间实现可调的相变。利用邻近耦合相变铁电层的思路，我们展示了集成在二维MoS通道上的相变铁电场效应晶体管（PCFE-FET）。在诱导相变温度附近，我们的器件表现出超越玻尔兹曼极限的陡峭亚阈值斜率。相变的温度可调性使我们的PC-FEFETs在低温及近室温应用的低功耗计算解决方案中极具前景。
Abstract
Ferroelectric hafnia has emerged as a transformative material in advanced electronics, with Complementary Metal Oxide Semiconductor (CMOS) compatibility, robust ferroelectricity, and scalability for applications including memory and ferroelectric field effect transistors (FEFETs). We demonstrate wake-up-free, robust ferroelectricity in solution-processed La-doped hafnia (LHO, 40 nm thick). By leveraging a metal-insulator transition (MIT) in the bottom electrode, TiO(N), a Mott Insulator, we engineer a depolarization-field-controlled reversible polar-to-non-polar phase transitions via the proximity effect in the ferroelectric hafnia layer. We further show that capping the ferroelectric layer with AlO of various thicknesses, allows for subtle oxidation of the bottom electrode, resulting in tunable phase transitions between 140 and 260 K. Using the idea of proximity-coupled phase-transitioning ferroelectric layers, we demonstrate phase-change ferroelectric field-effect transistor (PCFE-FET) integrated onto a 2D MoS channel. Near the induced phase transition temperatures, our devices show steep subthreshold slopes surpassing the Boltzmann limit. The temperature tunability of the phase transitions renders our PC-FEFETs highly promising for low-power computing solutions for both cryogenic and near-room temperature applications.
如何引用
AMA
Jalaja M A, Sooraj Sanjay, Binoy Krishna De, Shubham Kumar Parate, Sandeep Jajjara, Taewoong Kim, et al. Proximity Engineered Tunable Phase Transitions in Ferroelectric Hafnia and Steep Switching Phase Change FETs.. Small (Weinheim an der Bergstrasse, Germany). 2026; doi:10.1002/smll.74525.
APA
Jalaja M A, Sooraj Sanjay, Binoy Krishna De, Shubham Kumar Parate, Sandeep Jajjara, Taewoong Kim, et al (2026). Proximity Engineered Tunable Phase Transitions in Ferroelectric Hafnia and Steep Switching Phase Change FETs.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.74525
GB/T 7714
Jalaja M A, Sooraj Sanjay, Binoy Krishna De, Shubham Kumar Parate, Sandeep Jajjara, Taewoong Kim, et al. Proximity Engineered Tunable Phase Transitions in Ferroelectric Hafnia and Steep Switching Phase Change FETs.[J]. Small (Weinheim an der Bergstrasse, Germany), 2026 doi:10.1002/smll.74525.
在 PubMed增强版 阅读全文
翻译全文 · AI 文献问答 · PDF 原文下载 · 引用导出