Nature Nanotechnology自然·纳米技术
Nature Nanotechnology(英文缩写 NAT NANOTECHNOL),ISSN 1748-3387,eISSN 1748-3395,中文译名:自然·纳米技术 是一本学术期刊。本页汇总该期刊的最新影响因子、分区信息以及最新收录于 PubMed 的文献,帮助您快速了解期刊全貌。
发文量统计区间：2025-11-01 至 2026-10-31，按本站收录文献的发表日期统计。
期刊介绍
历年影响因子趋势
| JCR 数据年份 | 影响因子 | JCR 分区 |
|---|---|---|
| 2021 | 40.523 | Q1 |
| 2022 | 38.300 | Q1 |
| 2023 | 38.100 | Q1 |
| 2024 | 34.900 | Q1 |
| 2025 | 37.500 | Q1 |
Nature Nanotechnology 最新收录文献
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1. Stopped-light-enhanced gravitational force sensing.
1. 停光增强型引力传感PMID:日期:2026-09-29As the weakest fundamental force, gravity yields only small accelerations from millimetre-scale masses, making them difficult to detect. Detecting the gravitational fields of microscopic objects is important for microscale sensing, imaging or studies of the impact of the quantum state of an object on gravity. Cavendish-type torsion balances can sensitively measure gravity from small source masses, but their integration with micro- and nanophotonic readout remains challenging. Here we show gravitational-force sensing of a millimetre-sized mass using a torsion pendulum integrated with optical microcavity readout. A coupled photon-phonon resonance induces stopped light behaviour, reducing the group velocity to 2,000 m s and producing steep optical dispersion. The exponentially decaying evanescent field of the microcavity converts nanoscale displacements over an ~100 nm coupling length into optical signals, thereby increasing displacement sensitivity. The sensor reaches a displacement sensitivity of 7.85 pm/ , corresponding to an acceleration sensitivity of 3.06 × 10 g. By periodically modulating the mass position, we resolve a minimum detectable gravitational-force change of 3.02 × 10 N. This compact, sensitive scheme supports microscopic gravitational sensing and may allow for studies of gravity's quantum nature.
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2. Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory.
PMID:日期:2026-09-29Two-dimensional rhombohedral boron nitride (rBN) has emerged as a promising sliding ferroelectric material for high-density, fast-speed and non-volatile memories. However, the batch production of ferroelectric rBN wafers has remained a critical challenge due to the thermodynamic instability of the rhombohedral phase and the inherent difficulties in maintaining consistent growth kinetics. Here we report a step-templated interfacial epitaxy strategy that enables the reproducible fabrication of 4-inch rBN wafers from nickel-boron films sputtered on the stepped sapphires. Comprehensive structural characterizations across multiple scales confirm the high phase purity and batch-to-batch consistent quality of produced rBN wafers. The intrinsic sliding ferroelectricity is verified in a unified ferroelectric field-effect transistor (FeFET), which exhibits ultrafast switching speed (at the nanosecond scale), high fatigue resistance (>2 × 10 cycles) and long-term non-volatility (10 years). FeFET arrays are also constructed based on rBN wafers, featuring a high integration density with significant on/off ratios (10). Remarkably, the rBN FeFETs can maintain large memory windows (4 V) and excellent thermal stability (>470 K), even at an ultrashort channel length of 30 nm. These results establish rBN as a scalable platform for next-generation sliding ferroelectric memories, facilitating their applications in high-density memory chips and artificial intelligence accelerators.
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3. Two-dimensional materials for advanced back-end-of-line and wafer backside technologies.
PMID:日期:2026-09-17The continued evolution of computing hardware beyond conventional silicon complementary metal-oxide-semiconductor scaling demands new materials and innovative architectures to increase transistor density, reduce resistance-capacitance delay, mitigate thermal challenges and improve overall energy efficiency. Two-dimensional (2D) materials, including graphene, boron nitride and transition-metal dichalcogenides, offer a promising pathway to overcome interconnect scaling limits in advanced computing hardware. Their intrinsic properties enable reduced resistivity, lower resistance-capacitance delay and improved heat dissipation, making them particularly attractive for back-end-of-line (BEOL) applications. Moreover, the emerging backside power-delivery networks (BSPDNs) open up new application opportunities for 2D-material transistors at the wafer backside. In this Review, we focus on the integration of 2D materials in BEOL interconnects, including their roles as metallic wires, barrier/liner layers and dielectric fillers. We also discuss their potential for BEOL-integrated devices such as logic transistors, static random-access memory, embedded dynamic random-access memory, non-volatile memory and selectors, as well as their emerging use in BSPDNs. Through systematic benchmarking with conventional technologies, we highlight the promising opportunities offered by 2D materials in BEOL and backside integration for advanced node chip technologies and discuss the key challenges these new technologies face towards practical industrial applications.
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4. Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers.
4. 在200毫米硅晶圆上实现原子层沉积氧化物半导体的单片三维集成PMID:日期:2026-09-15Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor technology by extending dense vertical stacking of multifunctional logic and memory devices. Here we demonstrate wafer-scale M3D integration of three tiers of atomic-layer-deposited indium oxide (InO)-based devices (>100,000 fabricated), including ferroelectric, enhancement-mode and depletion-mode field-effect transistors, on 200-mm silicon wafers. We achieve threshold voltage standard deviations as low as 0.04 V, average electron mobilities of up to 91.6 cm V s and fully functional cross-tier circuits. A four-tier 3D computing-in-memory accelerator targeting large-language-model workloads is developed using a custom InO process design kit, delivering 1.4× to 2.9× speed-up and comparable energy-delay product improvements over 2D baselines. These results establish atomic-layer-deposited InO M3D integration as a scalable and complementary metal-oxide-semiconductor-compatible platform for next-generation artificial intelligence hardware and advanced electronics.
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5. Demonstration of on-chip all-optical switching of magnetization in integrated photonics.
PMID:日期:2026-09-14Ultrafast all-optical switching of magnetization holds great promise for next-generation spintronic memory and hybrid spintronic-photonic systems. However, most implementations so far have relied on bulky free-space optical setups, limiting scalability and practical integration. Here, as a critical step towards integrated applications, we demonstrate the single-pulse all-optical switching of magnetization within a silicon nitride photonic integrated circuit. Using trains of femtosecond laser pulses guided through on-chip waveguides, we achieve deterministic toggle switching in a submicrometre out-of-plane Co/Gd Hall cross patterned directly atop the photonic waveguide. Electrical read-out via the anomalous Hall effect reveals a switching contrast of up to 90% for 500-nm-wide devices. In larger Hall crosses, the contrast decreases and switching becomes stochastic, consistent with spatially non-uniform optical absorption as confirmed by finite-element simulations. This behaviour is hypothetically attributed to domain-wall relaxation and thermally assisted (de)pinning processes within partially switched regions. Our results highlight the critical role of device scaling in achieving robust on-chip all-optical switching of magnetization and establish a foundation for ultrafast, energy-efficient and fully integrated spintronic-photonic platforms.
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6. High-resolution intrinsically stretchable quantum-dot displays through thermally assisted intaglio transfer printing.
6. 通过热辅助凹版转印印刷的高分辨率本征可拉伸量子点显示器PMID:日期:2026-09-14Intrinsically stretchable light-emitting devices are promising for wearable displays, soft robotics and skin-mounted optoelectronics but are limited by the trade-off between mechanical softness, charge injection and pixel definition. Stretchable quantum-dot emissive layers offer narrow, colour-tunable emission from quantum-confined nanocrystals, yet elastomeric matrices introduce insulating barriers and viscoelastic deformation that compromise efficiency and high-resolution patterning. Here we report ligand engineering at the interface and thermally assisted intaglio film transfer printing (LIFT), a strategy for high-definition intrinsically stretchable quantum-dot light-emitting diodes. Selective replacement of the polymer-rich surface of quantum-dot nanocomposites with polar short-chain ligands forms a nanoscale interfacial region that lowers the hole-injection barrier while preserving bulk mechanical compliance. Thermal assistance concentrates strain at pattern boundaries, allowing clean cleavage of soft emissive films into high-fidelity pixel arrays. The devices achieve external quantum efficiencies of up to 23.9% in conventional architectures and fully stretchable QLEDs with a luminance of 53,300 cd m⁻, an external quantum efficiency of 8.0% and stretchability beyond 65%. The method further produces arrays up to 16,000 pixels per inch and stretchable 12 × 12 multicolour passive-matrix displays.
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7. Stretchable quantum dot displays achieve high definition.
7. 可拉伸量子点显示器实现高分辨率PMID:日期:2026-09-14该文献暂无摘要。
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8. Single-gate, multipartite entanglement on a room-temperature quantum register.
8. 室温量子寄存器上的单门多体纠缠PMID:日期:2026-09-14Multipartite entanglement is an essential aspect of quantum systems, needed to execute quantum algorithms, implement error correction and achieve quantum-enhanced sensing. In solid-state quantum registers such as nitrogen-vacancy centres in diamond, entangled states are typically created using sequential, pairwise gates between the central electron and individual nuclear qubits. This sequential approach is slow and suffers from crosstalk errors. Here we demonstrate a parallelized multi-qubit entangling gate to generate a four-qubit Greenberger-Horne-Zeilinger state using a room-temperature nitrogen-vacancy centre in only 14.8 μs-ten times faster than that using sequences of two-qubit gates and close to the fundamental limit set by the hyperfine coupling frequencies. Parallel three-qubit gates are also realized with all-nuclear-qubit subsets. The entangled states are verified by measuring multiple quantum coherences. The four-qubit parallel gate has a fidelity of 0.92(4), whereas the sequential four-qubit gate fidelity is only 0.69(3). The approach is generalizable to other solid-state platforms, and it lays the foundation for scalable generation and control of entanglement in practical devices.
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9. Author Correction: Half-wave nanolasers and intracellular plasmonic lasing particles.
9. 作者更正：半波纳米激光器与细胞内等离激元激光颗粒PMID:日期:2026-09-10该文献暂无摘要。
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10. Author Correction: Nanopore-enabled time-resolved monitoring of catecholamine-related phenylalanine metabolism.
10. 作者更正：基于纳米孔的时间分辨监测儿茶酚胺相关苯丙氨酸代谢PMID:日期:2026-09-09该文献暂无摘要。