IEEE TRANSACTIONS ON ELECTRON DEVICESIEEE电子器件汇刊
IEEE TRANSACTIONS ON ELECTRON DEVICES(英文缩写 IEEE T ELECTRON DEV),ISSN 0018-9383,eISSN 1557-9646,中文译名:IEEE电子器件汇刊 是一本学术期刊。本页汇总该期刊的最新影响因子、分区信息以及最新收录于 PubMed 的文献,帮助您快速了解期刊全貌。
发文量统计区间：2025-11-01 至 2026-10-31，按本站收录文献的发表日期统计。
期刊介绍
历年影响因子趋势
| JCR 数据年份 | 影响因子 | JCR 分区 |
|---|---|---|
| 2021 | 3.221 | Q2 |
| 2022 | 3.100 | Q2 |
| 2023 | 2.900 | Q2 |
| 2024 | 3.200 | Q2 |
| 2025 | 3.600 | Q2 |
IEEE TRANSACTIONS ON ELECTRON DEVICES 最新收录文献
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1. Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.
1. 无细丝多层体阻变存储器中传导机制的建模PMID:日期:2025-01-10Filament-free bulk RRAM (resistive-switching random access memory) devices have been proposed to offer multi-level conductance states with less variations and noise and forming-free operation for neuromorphic computing applications. Understanding conduction mechanism and switching dynamics of filament-free bulk RRAM devices is crucial to optimize device characteristics and to build large-scale arrays for compute in memory and neuromorphic computing applications. Here, we first analyze switching characteristics of bulk RRAM by temperature dependent I-V measurements. We then present a quantitative physical model describing the conduction across trilayer stack by a series combination of multiple conduction mechanisms across each layer. Using this model and fitting it to the experimental characteristics of filament-free bulk RRAM devices, we investigate the origin of bulk switching in trilayer stacks. We demonstrate that our model can be used as a guide to design bulk switching RRAM devices from multilayer stacks of metal oxides.
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2. {"_":"Evaluation of a Large Area, 83 m Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector.","i":["μ"]}
PMID:日期:2023-12-07Dual-layer detectors provide a low-cost solution to improved material decomposition and lesion differentiation in X-ray imaging, while eliminating motion artifacts from multiple exposures. Most designs utilize two indirect detectors with scintillators designed for low-energy and higher-energy detection and separated by a copper filter to harden the beam for high energy detection. To improve the performance of the bottom detector and lower dose requirements, we have previously proposed an alloyed amorphous selenium photodetector to achieve improved resolution and absorption at green wavelengths, better suited to high-performance scintillators such as CsI:Tl. In this work, we demonstrate a baseline prototype for the bottom layer-a continuous, large area 83 m pixel pitch flat panel indirect detector with well-established amorphous selenium as the photodetector-and verify the architecture's performance and detector design. We characterize lag, noise-power spectrum, detective quantum efficiency, and modular transfer function of the detector, and show resolution up to 6 lp/mm when operated at an applied bias of 150 V. This provides a starting point for evaluating the alloyed selenium materials, and shows promise for this detector in the future dual-layer design.
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3. Demonstration of a 263-GHz Traveling Wave Tube for Electron Paramagnetic Resonance Spectroscopy.
3. 用于电子顺磁共振波谱学的263-GHz行波管演示PMID:日期:2023-09-20In this letter, a 263 GHz traveling wave tube for electron paramagnetic resonance spectroscopy is designed, fabricated and tested. A periodic permanent magnet focused pencil beam electron optical system is adopted. A folded waveguide slow-wave structure with modified serpentine bends is optimized to provide high-power wideband performance and stable operation. An experiment has been performed to verify the analysis results and confirm the amplifier stability. The device provides a maximum 11.9 W saturation output power and 25.5 dB saturation gain. Although the available solid-state signal source is unable to drive the amplifier to saturation beyond 260 - 264 GHz, 10 W output power over 5.6 GHz bandwidth has been measured.
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4. A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.
4. 一种用于IGZO薄膜晶体管电路的综合大信号、小信号和噪声模型PMID:日期:2023-07-25We report a new physics-based model for dual-gate amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) which we developed and fine-tuned through experimental implementation and benchtop characterization. We fabricated and characterized a variety of test patterns, including a-IGZO TFTs with varying gate widths (100-1000 m) and channel lengths (5-50 m), transmission-line-measurement patterns and ground-signal-ground (GSG) radio frequency (RF) patterns. We modeled the contact resistance as a function of bias, channel area, and temperature, and captured all operating regimes, used physics-based modeling adjusted for empirical data to capture the TFT characteristics including ambipolar subthreshold currents, graded interbias-regime current changes, threshold and flat-band voltages, the interface trap density, the gate leakage currents, the noise, and the relevant small signal parameters. To design high-precision circuits for biosensing, we validated the dc, small signal, and noise characteristics of the model. We simulated and fabricated a two-stage common source amplifier circuit with a common drain output buffer and compared the measured and simulated gain and phase performance, finding an excellent fit over a frequency range spanning 10 kHz-10 MHz.
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5. Frontiers in the Application of RF Vacuum Electronics.
5. 射频真空电子学应用的前沿PMID:日期:2023-03-03The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important applications in health treatment, material and biological science, wireless communication-terrestrial and space, Earth environment remote sensing, and the promise of safe, reliable, and inexhaustible energy. This article highlights some of the exciting application frontiers of vacuum electronics.
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6. Au Nanoparticles/HfO₂/Fully Depleted Silicon-on-Insulator MOSFET Enabled Rapid Detection of Zeptomole COVID-19 Gene With Electrostatic Enrichment Process.
6. 金纳米颗粒/HfO₂/全耗尽绝缘体上硅MOSFET实现带静电富集过程的仄摩尔级COVID-19基因快速检测PMID:日期:2023-01-06In this work, a novel sensing structure based on Au nanoparticles/HfO2/fully depleted silicon-on-insulator (AuNPs/HfO2/FDSOI) MOSFET is fabricated. Using such a planar double gate MOSFET, the electrostatic enrichment (ESE) process is proposed for the ultrasensitive and rapid detection of the coronavirus disease 2019 (COVID-19) ORF1ab gene. The back-gate (BG) bias can induce the required electric field that enables the ESE process in the testing liquid analyte with indirect contact with the top-Si layer. It is revealed that the ESE process can rapidly and effectively accumulate ORF1ab genes close to the HfO2 surface, which can significantly change the MOSFET threshold voltage ([Formula: see text]). The proposed MOSFET successfully demonstrates the detection of zeptomole (zM) COVID-19 ORF1ab gene with an ultralow detection limit down to 67 zM (~0.04 copy/[Formula: see text]) for a test time of less than 15 min even in a high ionic-strength solution. Besides, the quantitative dependence of [Formula: see text] variation on COVID-19 ORF1ab gene concentration from 200 zM to 100 femtomole is also revealed, which is further confirmed by TCAD simulation.
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7. A Neuromorphic Brain Interface based on RRAM Crossbar Arrays for High Throughput Real-time Spike Sorting.
7. 一种基于RRAM交叉阵列的神经形态脑接口，用于高通量实时尖峰分类PMID:日期:2021-12-13Real-time spike sorting and processing are crucial for closed-loop brain-machine interfaces and neural prosthetics. Recent developments in high-density multi-electrode arrays with hundreds of electrodes have enabled simultaneous recordings of spikes from a large number of neurons. However, the high channel count imposes stringent demands on real-time spike sorting hardware regarding data transmission bandwidth and computation complexity. Thus, it is necessary to develop a specialized real-time hardware that can sort neural spikes on the fly with high throughputs while consuming minimal power. Here, we present a real-time, low latency spike sorting processor that utilizes high-density CuO resistive crossbars to implement in-memory spike sorting in a massively parallel manner. We developed a fabrication process which is compatible with CMOS BEOL integration. We extensively characterized switching characteristics and statistical variations of the CuO memory devices. In order to implement spike sorting with crossbar arrays, we developed a template matching-based spike sorting algorithm that can be directly mapped onto RRAM crossbars. By using synthetic and recordings of extracellular spikes, we experimentally demonstrated energy efficient spike sorting with high accuracy. Our neuromorphic interface offers substantial improvements in area (~1000× less area), power (~200× less power), and latency (4.8s latency for sorting 100 channels) for real-time spike sorting compared to other hardware implementations based on FPGAs and microcontrollers.
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8. Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology.
8. 用于交流和直流电学计量的石墨烯量子霍尔效应器件PMID:日期:2021-07-01A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO) to control the charge carrier density and have branched Hall contacts based on NbTiN superconducting material. The work is an in-depth study about the characteristic capacitances and related losses in the ac regime of the devices and about their performance during precision resistance measurements at dc and ac.
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9. Second Harmonic 527-GHz Gyrotron for DNP-NMR: Design and Experimental Results.
9. 用于DNP-NMR的二次谐波527 GHz回旋管：设计和实验结果PMID:日期:2019-12-10We report the design and experimental demonstration of a frequency tunable terahertz gyrotron at 527 GHz built for an 800 MHz Dynamic Nuclear Polarization enhanced Nuclear Magnetic Resonance (DNP-NMR) spectrometer. The gyrotron is designed at the second harmonic ( = 2 ) of the electron cyclotron frequency. It produces up to 9.3 W continuous microwave (CW) power at 527.2 GHz frequency using a diode type electron gun operating at V = 16.65 kV, I = 110 mA in a TE mode, corresponding to an efficiency of ~0.5%. The gyrotron is tunable within ~ 0.4 GHz by combining voltage and magnetic field tuning. The gyrotron has an internal mode converter that produces a Gaussian-like beam that couples to the HE mode of an internal 12 mm i.d. corrugated waveguide periscope assembly leading up to the output window. An external corrugated waveguide transmission line system is built including a corrugated taper from 12 mm to 16 mm i.d. waveguide followed by 3 m of the 16 mm i.d. waveguide The microwave beam profile is measured using a pyroelectric camera showing ~ 84% HE mode content.
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10. Two-Terminal and Multi-Terminal Designs for Next-Generation Quantized Hall Resistance Standards: Contact Material and Geometry.
10. 下一代量子化霍尔电阻标准的两端子和多端子设计：接触材料与几何结构PMID:日期:2019In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved.