表面声波引导的可重构忆阻器
Surface Acoustic Wave-Guided Reconfigurable Memristor.
Surface Acoustic Wave-Guided Reconfigurable Memristor.
神经形态计算需要能够同时模拟非易失性和易失性操作的存储元件。然而,在不牺牲性能或器件疲劳的前提下实现可重构性仍然是一项关键挑战。传统电驱动忆阻器在保持其非易失状态的同时难以维持重复的易失状态,这为实现可靠的可重构性带来了重大挑战。在此,我们报道了一种利用二维(2D)过渡金属硫族化合物单层MoS2的声表面波(SAW)刺激忆阻器,通过声电调制实现了可逆易失模式下的可重构存储操作。SAW激发为忆阻器操作提供了对二维材料电导的非接触、基于应变的控制,允许动态且非破坏性的易失行为,而不会劣化电编程的非易失状态。我们利用这些可调的时间动力学实现了基于二维单层MoS2的SAW驱动忆阻储备池,在字符分类任务中达到了96.1%的准确率。
Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS2 that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS2, achieving 96.1% accuracy in a character classification task.
Sihyeok Kim, Jang Woo Lee, Hyeonseung Ryu, Taehoon Kim, Hayoung Ko, Soo Ho Choi, et al. Surface Acoustic Wave-Guided Reconfigurable Memristor.. ACS nano. 2026; doi:10.1021/acsnano.6c01958.
Sihyeok Kim, Jang Woo Lee, Hyeonseung Ryu, Taehoon Kim, Hayoung Ko, Soo Ho Choi, et al (2026). Surface Acoustic Wave-Guided Reconfigurable Memristor.. ACS nano. https://doi.org/10.1021/acsnano.6c01958
Sihyeok Kim, Jang Woo Lee, Hyeonseung Ryu, Taehoon Kim, Hayoung Ko, Soo Ho Choi, et al. Surface Acoustic Wave-Guided Reconfigurable Memristor.[J]. ACS nano, 2026 doi:10.1021/acsnano.6c01958.
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