npj 2D Materials and Applications
npj 2D Materials and Applications(英文缩写 NPJ 2D MATER APPL),ISSN 2397-7132,eISSN 2397-7132 是一本学术期刊。本页汇总该期刊的最新影响因子、分区信息以及最新收录于 PubMed 的文献,帮助您快速了解期刊全貌。
发文量统计区间：2025-09-21 至 2026-09-21，按本站收录文献的发表日期统计。
指标来源：jcr_cas_ifqb
期刊简介
暂无简介。
npj 2D Materials and Applications 最新收录文献
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1. {"_":"Hubbard dimer physics and the magnetostructural transition in the correlated cluster material NbCl.","sub":["3","8"]}
PMID:作者:日期:2026-01-01We present a combined computational and experimental study of NbCl, a correlated layered material containing Nb trimers, through the lens of competing intra- and intercluster interactions. Different proposed explanations for its magnetostructural transition, such as charge disproportionation, antife…
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2. Mechanical reinforcement of graphene via wrinkling.
PMID:作者:日期:2026-01-01Mechanical cantilevers are central to nanotechnology, where low bending rigidity makes stability the fundamental challenge. Here, we introduce a wrinkle-induced stiffening approach that enhances the bending rigidity of monolayer graphene by several orders of magnitude, enabling the fabrication of me…
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3. {"_":"Oxide induced degradation in MoS field-effect transistors.","sub":["2"]}
PMID:作者:日期:2026-01-01Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. This study examines how amorphous AlO and HfO interfaces affect monolayer to trilayer MoS …
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4. Sustainable, solvent-free exfoliation of 2D materials for thermally conductive metal powder coatings.
PMID:作者:日期:2026-01-012D nanomaterials offer unique functional properties when combined with metal powder feedstock, enabling advanced composites for engineering and energy applications. Scalable fabrication of nanosheet-reinforced metal matrix composites (MMCs) remains challenging. In this study, we first exfoliate 2D m…
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5. Enhancing plasmonic superconductivity in layered materials via dynamical Coulomb engineering.
PMID:作者:日期:2026-01-01Conventional Coulomb engineering, through controlled manipulation of the environment, offers an effective route to tune the correlation properties of atomically thin van der Waals materials via static screening. Here we present tunable screening as a method for precisely tailoring bosonic modes to o…
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6. {"_":"Towards atomically-thin regime in bulk 4H-NbSe with interlayer disorder.","sub":["2"]}
PMID:作者:日期:2026-01-01Polytypism in transition metal dichalcogenides (TMDs) introduces an additional degree of freedom for tailoring the electronic properties of layered van der Waals materials. Polytypes with larger unit cells, spanning four or six layers, can be viewed as natural homostructures, since their atomic comp…
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7. Dissecting intervalley coupling mechanisms in monolayer transition metal dichalcogenides.
PMID:作者:日期:2026-01-01Monolayer (1L) transition metal dichalcogenides (TMDs) provide a unique opportunity to control the valley degree of freedom of optically excited charge carriers due to the spin-valley locking effect. However, a unified picture of competing intervalley coupling processes in 1L-TMDs is lacking. Here, …
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8. {"_":"Homoepitaxial growth of isotopically enriched hBN layers on hBN crystals by high-temperature molecular beam epitaxy.","sup":["10","11"]}
PMID:作者:日期:2025-01-01Isotope-enriched bulk hexagonal boron nitride (hBN) crystals have enhanced properties that improve the performance of nanophotonic and quantum technologies. Developing methods to deposit epitaxial layers on such crystals enables the exciting prospects of producing isotope-engineered hBN layers and h…
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9. {"_":"Hidden order revealed by light-driven Kerr rotation in Centrosymmetric bulk WSe.","sub":["2"]}
PMID:作者:日期:2025-01-01Single-layer semiconducting transition-metal dichalcogenides, lacking point inversion symmetry, provide an efficient platform for valleytronics, where the electronic, orbital, magnetic, valley, and lattice degrees of freedom can be selectively manipulated by using polarized light. This task is, howe…
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10. Imaging junctions in two-dimensional semiconductor nanosheet networks.
PMID:作者:日期:2025-01-01This study explores the challenges associated with translating electrical characteristics of individual two-dimensional semiconductor nanosheets into a network of partially overlapping sheets. Such systems typically suffer from high-energy barriers required to overcome the junctions formed between t…